Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,Hardware and Architecture
Reference17 articles.
1. Physics of Semiconductor Devices;Sze,1981
2. Macroscopic description of quantum-mechanical tunneling
3. Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
4. Equations of state for silicon inversion layers
5. Proc. 3rd WSES/IEEE Inter. Conf. Math. Comput. Phys.;Li,2001
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