Characterization of Al-implanted 4H SiC High Voltage Diodes-Reference-Cited by-同舟云学术

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Characterization of Al-implanted 4H SiC High Voltage Diodes

Published:2002 Issue:1 Volume:T101 Page:207
ISSN:0031-8949
Container-title:Physica Scripta
language:en
Short-container-title:Physica Scripta

Author:

Kalinina E.,Onushkin G.,Strel'chuk A.,Davidov D.,Kossov V.,Yafaev R.,Hall?n A.,Kuznetsov A.,Konstantinov A.

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/2002/i=T101/a=052/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum;Semiconductors;2010-06

2. Performance Modification of SiC MEMS;Materials Science Forum;2009-03

3. Vapour phase growth of epitaxial silicon carbide layers;Progress in Crystal Growth and Characterization of Materials;2003-01

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