Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1999/i=T79/a=056/pdf
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation;Solid-State Electronics;2008-02
2. Influence of annealing ambient on GaAs oxide prepared by the liquid phase method;Solid-State Electronics;2004-12
3. Liquid Phase Chemical Enhanced Oxidation on AlGaAs and Its Application;Japanese Journal of Applied Physics;2004-07-07
4. Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method;Materials Chemistry and Physics;2003-02
5. Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface;Journal of Electronic Materials;2002-01
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