Influence of annealing ambient on GaAs oxide prepared by the liquid phase method

Author:

Chou Dei-Wei,Wang Liang-Tang,Wang Hwei-Heng,Sze Po-wen,Wang Yeong-Her,Houng Mau-Phon

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

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2. The current understanding of charges in the thermally oxidized silicon structure;Deal;J. Electrochem. Soc.,1974

3. Wolf S, Tauber RN, editors. Silicon processing for the VLSI Era, vol. 1: Process technology. Sunset Beach, CA: Lattice Press; 1986 [Chapter 7]

4. Physics and chemistry of III–V compound semi conductor interfaces,1985

5. Rapid thermal postoxidation anneal engineering in thin gate oxides with Al gates;Chen;IEEE Trans. Electron Dev.,1998

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