Heterogeneous III–V silicon photonic integration: components and characterization
Author:
Publisher
Zhejiang University Press
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/content/pdf/10.1631/FITEE.1800482.pdf
Reference30 articles.
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2. Beling A, Cross AS, Piels M, et al., 2013. InP-based wave-guide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation. Opt Expr, 21(22):25901–25906. https://doi.org/10.1364/OE.21.025901
3. Cristofori V, da Ros F, Ozolins O, et al., 2017. 25-Gb/s transmission over 2.5-km SSMF by silicon MRR enhanced 1.55-µm III–V/SOI DML. IEEE Photon Technol Lett, 29(12):960–963. https://doi.org/10.1109/LPT.2017.2700497
4. Dhoore S, Li LY, Abbasi A, et al., 2016. Demonstration of a discretely tunable III–V-on-silicon sampled grating DFB laser. IEEE Photon Technol Lett, 28(21):2343–2346. https://doi.org/10.1109/LPT.2016.2593983
5. Doerr C, 2015. Silicon photonic integration in telecommunications. Front Phys, 3(2): 137–179. https://doi.org/10.3389/fphy.2015.00037
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