Effect of a TiO2Buffer Layer on the Properties of ITO Films Prepared by RF Magnetron Sputtering-Reference-Cited by-同舟云学术

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Effect of a TiO2Buffer Layer on the Properties of ITO Films Prepared by RF Magnetron Sputtering

Published:2013-10-25 Issue:5 Volume:14 Page:242-245
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Transactions on Electrical and Electronic Materials

Author:

Kim Daeil

Publisher

The Korean Institute of Electrical and Electronic Material Engineers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kieeme/JAKO201332479510130.pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of electrical values of low-efficiency dye-sensitized solar cells (DSSCs);Energy;2020-05

2. Electrically conductive TiO2/indium tin oxide coated glass substrates with high visible light transparency prepared by an electrodeposition method;Thin Solid Films;2019-12

3. Thermal, dielectric and antimicrobial properties of polystyrene-assisted/ITO:Cu nanocomposites;Applied Physics A;2019-01

4. Performance improvement of organic light emitting diode using 4,4 $$^{\prime }$$ ′ -N,N $$^{\prime }$$ ′ -dicarbazole-biphenyl (CBP) layer over fluorine-doped tin oxide (FTO) surface with doped light emitting region;Pramana;2018-09-14

5. Fabrication of organic light-emitting diode using molybdenum trioxide interlayer between electrode and organic interface;Bulletin of Materials Science;2018-07-11

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