Optical properties of CuInSe2 thin film deposited by stacked elemental layers for solar cells application

Abstract

In this paper, we report the optical properties of CuInSe2 thin films prepared by the  Stacked Elemental Layers (SEL) technique. The thin films were deposited in an evacuated chamber 10torr)  by  evaporating  Cu,  In  and  Se  from  electrically  controlled  heating appropriate  crucible.  Then  the  films  were  annealed  under  argon  atmosphere  at  different  temperatures and time. The optical properties of the films were characterized by transmission  spectrophotometer measurements. The band gap of the samples was estimated using optical  transmittance and found to be ~ 1.03eV.