SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si
Author:
Pagava Teimuraz1, Chkhartishvili Levan1, Beridze Manana1, Metskhvarishvili Magda1, Kalandadze Iamze1, Khocholava Darejan1, Esiava Nona1, Kevkhishvili Maia1, Matcharashvili Marine1
Affiliation:
1. Georgian Technical University
Abstract
The aim of research is studying the mechanism of n–p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron concentration of 2×1014 cm–3 were studied. Uniaxial compression at temperature of 700 °С and pressure of 25 MPa increased the dislocation density to 108 cm–2. After long (within 30 min) cooling of the deformed crystals to room temperature, an n–p inversion of the conduction type occurred. The effect is explained by the formation of phosphorus–divacancy complexes PV2 in the defective atmosphere of dislocations, which are acceptor centers with energy level of Ev+0.34 eV. The found out n–p inversion mechanism differs from the standard one for plastically deformed n-type semiconductors with a diamond-like crystalline structure, which consists in the formation of acceptor centers along edge dislocations.
Publisher
OU Scientific Route
Subject
General Physics and Astronomy,General Engineering
Reference14 articles.
1. Dvurechenskij, A. V., Remesnik, V. G., Ryazantsev, I. A., Talipov, N. Kh. (1993). Conduction type inversion in plasma-treated CdxHg1–xTe layers. Semiconductors, 27 (1), 168–171. 2. Ibragimova, M. I., Baryshev, N. S., Zhikharev, V. A., Khaybullin, I. B. (1995). Recombination characteristics of ion-implanted (I, III and VIII groups) and thermally annealed CdxHg1–xTe crystals. Semiconductors, 29 (10), 1755–1763. 3. Grekov, Y. B., Shlyakhov, T. A., Semikolenova, N. A. (1997). Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power. Semiconductors, 31 (8), 844–846. doi: https://doi.org/10.1134/1.1187239 4. Vaksman, Y. F., Nitsuk, Y. A., Purtov, Y. N., Shapkin, P. V. (2003). Inversion of conductivity type in ZnSe single crystals obtained by the method of free growth. Semiconductors, 37 (2), 145–147. doi: https://doi.org/10.1134/1.1548654 5. Kosyachenko, L. A., Maslyanchuk, O. L., Melnychuk, S. V., Sklyarchuk, V. M., Sklyarchuk, O. V., Aoki, T. (2010). Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals. Semiconductors, 44 (6), 699–704. doi: https://doi.org/10.1134/s1063782610060023
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
|
|