Inversion of conductivity type in ZnSe single crystals obtained by the method of free growth-Reference-Cited by-同舟云学术

Inversion of conductivity type in ZnSe single crystals obtained by the method of free growth

Published:2003-02 Issue:2 Volume:37 Page:145-147
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vaksman Yu. F.,Nitsuk Yu. A.,Purtov Yu. N.,Shapkin P. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1548654.pdf

Reference5 articles.

1. Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 920 (2001) [Semiconductors 35, 883 (2001)].

2. Yu. V. Korostelin, V. I. Kozlovsky, A. S. Nasibov, and P. V. Shapkin, J. Cryst. Growth 197, 449 (1999).

3. D. D. Nedeoglo and A. V. Simashkevich, Electrical and Luminescent Properties of Zinc Selenide (Shtiintsa, Kishinev, 1980).

4. V. V. Serdyuk, N. N. Korneva, and Yu. F. Vaksman, Phys. Status Solidi A 91, 173 (1985).

5. A. N. Krasnov, Yu. F. Vaksman, and Yu. N. Purtov, Pis’ma Zh. Tekh. Fiz. 18(12), 1 (1992) [Sov. Tech. Phys. Lett. 18, 763 (1992)].

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