Peak Height Approximation for X-Ray Diffracted Integrated Intensity

Abstract

A fast X-ray diffraction powder method of quantitative analysis has been developed and demonstrated using mixtures of alpha and beta silicon nitride and silicon.An analytical procedure, assuming both Gaussian and Cauchy diffracted characteristic line distributions, was used to synthesize CuKα X-ray peaks in the 2θ range 20° to 50° with peak widths from 0.1° to 0.4° 2θ. The relationship of peak height to integrated intensity was established as a function of peak width and tested using pure silicon powder with variable receiving slit widths from 0.01° to 0.40° 2θ.Concentration calibration curves for silicon nitride and silicon were corrected for extinction and preferred orientation with statistical figures of merit to indicate the extent of preferred orientation.Preliminary results indicate that this procedure may be used for cold-worked materials.