Author:
KE Xin,XIE Bingqing,WANG Zhong,ZHANG Jingguo,WANG Jianwei,LI Zhanrong,HE Huijun,WANG Limin
Publisher
Shanghai Institute of Ceramics
Subject
Inorganic Chemistry,General Materials Science
Reference118 articles.
1. TSUYOSHI F, JUAN C B, JEREMY J, et al. Power conversion with SiC devices at extremely high ambient temperature. IEEE Transactions on Power Electronics, 2007, 22(4):1321.
2. TSUYOSHI F, HIROYASU I, MASASHI S, et al. Characterization of SiC power module for high switching frequency operation. IEICE Electronics Express, 2010, 7(14):1008.
3. JOHNSON R W, PALMER M, WANG C, et al. Packaging materials and approaches for high temperature SiC power devices. Advancing Microelectronics, 2004, 31(1):8.
4. MCCLUSKEY F P, DASH M, WANG Z, et al. Reliability of high temperature solder alternatives. Microelectronics Reliability, 2006, 46(9/10/11): 1910.
5. 中华人民共和国科学技术部. “十三五”材料领域科技创新专项规划(2017), 306082017496. 北京: 中华人民共和国科学技术部, 2017: 1-29.
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