Progress of Interconnect Materials in the Third-generation Semiconductor and Their Low-temperature Sintering of Copper Nanoparticles

Author:

KE Xin,XIE Bingqing,WANG Zhong,ZHANG Jingguo,WANG Jianwei,LI Zhanrong,HE Huijun,WANG Limin

Publisher

Shanghai Institute of Ceramics

Subject

Inorganic Chemistry,General Materials Science

Reference118 articles.

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2. TSUYOSHI F, HIROYASU I, MASASHI S, et al. Characterization of SiC power module for high switching frequency operation. IEICE Electronics Express, 2010, 7(14):1008.

3. JOHNSON R W, PALMER M, WANG C, et al. Packaging materials and approaches for high temperature SiC power devices. Advancing Microelectronics, 2004, 31(1):8.

4. MCCLUSKEY F P, DASH M, WANG Z, et al. Reliability of high temperature solder alternatives. Microelectronics Reliability, 2006, 46(9/10/11): 1910.

5. 中华人民共和国科学技术部. “十三五”材料领域科技创新专项规划(2017), 306082017496. 北京: 中华人民共和国科学技术部, 2017: 1-29.

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