Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)-Reference-Cited by-同舟云学术

Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)

Published:2014-04-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Kearney Patrick A.¹,Wood Obert²,Hendrickx Eric³,McIntyre Greg⁴,Inoue Soichi⁵,Goodwin Frank¹,Wurm Stefan¹,van Schoot Jan⁶,Kaiser Winfried⁷

Affiliation:

1. SEMATECH Inc. (United States)

2. GLOBALFOUNDRIES Inc. (United States)

3. IMEC (Belgium)

4. IBM Microelectronics (United States)

5. EUVL Infrastructure Development Ctr., Inc. (Japan)

6. ASML Netherlands B.V. (Netherlands)

7. Carl Zeiss SMT GmbH (Germany)

Publisher

SPIE

Reference4 articles.

1. 2013 ITRS Figure 3A. Semiconductor Industry Association. The International Technology Roadmap for Semiconductors, 2013 edition. SEMATECH:Albany, NY, 2014.

2. Considerations for high-numerical aperture EUV lithography;Levinson,2013

3. Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio;Neumann,2013

4. Jia Zeng, Jongwook Kye, Obert Wood, “High-NA EUV COO,” High-NA EUV Workshop, Toyama, Japan, October 8, 2013, the calculations were performed in October 2013 and will be updated based on recent inputs in the near future.

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