Across scanner platform optimization to enable EUV lithography at the 10-nm logic node-Reference-Cited by-同舟云学术

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Across scanner platform optimization to enable EUV lithography at the 10-nm logic node

Published:2014-04-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Mulkens Jan¹,Karssenberg Jaap¹,Wei Hannah¹,Beckers Marcel¹,Verstappen Leon¹,Hsu Stephen²,Chen Guangqin²

Affiliation:

1. ASML Netherlands B.V. (Netherlands)

2. ASML Brion (United States)

Publisher

SPIE

Reference5 articles.

1. Yan Borodovsky, 2012 International Workshop on EUV Lithography, Maui, Hi

2. Holistic optimization architecture enabling sub-14-nm projection lithography

3. EUV source mask optimization for 7-nm node and beyond;Liu,2014

4. EUV Lithography NXE platform performance overview;Peeters,2014

5. Extending ArF immersion scanner capability in support of 1x-nm production nodes;Pieternella,2014

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of natural linear polysaccharide to green resist polymers for electron beam and extreme-ultraviolet lithography;Japanese Journal of Applied Physics;2014-10-30

2. Real-time inspection system utilizing scatterometry pupil data;Journal of Micro/Nanolithography, MEMS, and MOEMS;2014-09-19

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