EUV-LET 2.0: a compact exposure tool for industrial research at a wavelength of 13.5nm

Author:

Brose Sascha,Danylyuk Serhiy,Bahrenberg Lukas,Lebert Rainer,Stollenwerk Jochen,Loosen Peter,Juschkin Larissa

Publisher

SPIE

Reference20 articles.

1. Optimized phase-shifting masks for high-resolution resist patterning by interference lithography;Brose,2017

2. Optimization of a gas discharge plasma source for extreme ultraviolet interference lithography at a wavelength of 11 nm

3. Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

4. Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat;Suh;Nature Technology,2017

5. Structural properties of templated Ge quantum dot arrays: impact of growth and pre-pattern parameters

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1. Development of an ultra-compact inline transmission grating spectrograph for extreme ultraviolet wavelengths;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

2. Towards the resolution limit of Talbot lithography with compact EUV exposure tools;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

3. Design of an efficient illuminator for partially coherent sources in the extreme ultraviolet;Applied Optics;2022-04-04

4. Design and realization of an in-lab EUV dual beamline for industrial and scientific applications;International Conference on Extreme Ultraviolet Lithography 2021;2021-10-13

5. EUV scattering from carbon nanotube pellicles: measurement and control;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-06-08

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