Fixing the focus shift caused by 3D mask diffraction-Reference-Cited by-同舟云学术

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Fixing the focus shift caused by 3D mask diffraction

Published:2014-03-31 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Yenikaya Bayram,Chuyeshov Constantin,Bakir Onur,Han Youngae

Publisher

SPIE

Reference6 articles.

1. Simplified models for edge transitions in rigorous mask modeling;Adam,2001

2. Fundamental Principles of Optical Lithography

3. Incorporating mask topography edge diffraction in photolithography simulations

4. Understanding Bossung curve asymmetry and focus shift effect in EUV lithography;Yan,2002

5. Domain Decomposition Methods for the Electromagnetic Simulation of Scattering from Three-Dimensional Structures with Applications in Lithography;Adam,2001

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive and quantitative characterization and analysis method of 3D mask effect for lithography simulation;10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced and Extreme Micro-Nano Manufacturing Technologies;2021-12-13

2. Rigorous imaging-based measurement method of polarization aberration in hyper-numerical aperture projection optics;Optics Express;2021-06-17

3. Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-03-01

4. Mask-induced best-focus-shifts in DUV and EUV lithography;SPIE Proceedings;2015-03-18

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