Effect of the effective resist diffusion length to the photolithography at 65- and 45-nm nodes: a study with simple and accurate analytical equations-Reference-Cited by-同舟云学术

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Effect of the effective resist diffusion length to the photolithography at 65- and 45-nm nodes: a study with simple and accurate analytical equations

Published:2004-05-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Wu Qiang,Halle Scott D.,Zhao Zengqin

Publisher

SPIE

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical model-based ArF photoresist formulation development;AIP Advances;2024-02-01

2. Process Model Guided Photoresist Formulation Optimization;2021 International Workshop on Advanced Patterning Solutions (IWAPS);2021-12-12

3. A Study of Image Contrast, Stochastic Defectivity, and Optical Proximity Effect in EUV Photolithographic Process Under Typical 5 nm Logic Design Rules;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26

4. The Law that Guides the Development of Photolithography Technology and the Methodology in the Design of Photolithographic Process;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26

5. Limit of Line End Shortening Correction under Single Exposure in 193 nm Immersion Lithography;ECS Transactions;2011-03-21

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