Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface-Reference-Cited by-同舟云学术

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Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface

Published:2016-09-15 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Hayakawa Minehiro¹,Hayashi Yuki¹,Ichikawa Shuhei¹,Funato Mitsuru¹,Kawakami Yoichi¹

Affiliation:

1. Kyoto Univ. (Japan)

Publisher

SPIE

Reference13 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

4. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

5. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

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1. Confinement of Excitons within GaN 1D Nanoarchitectures Formed on AlN Molecular Steps;Advanced Optical Materials;2024-01-04

2. Carrier transport barrier in AlGaN-based deep ultraviolet LEDs on offcut sapphire substrates;Chinese Optics Letters;2024

3. Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates;AIP Advances;2023-04-01

4. Dual-peak electroluminescence spectra generated from Al _n _/12Ga_1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells;Journal of Physics D: Applied Physics;2022-03-29

5. Singularity structures for sub-250 nm emissions from AlGaN-based semiconductors;Japanese Journal of Applied Physics;2021-12-01

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