Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates-Reference-Cited by-同舟云学术

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Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Published:2010-02-11 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Oxide-based Materials and Devices
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Author:

Ougazzaden A.,Rogers D. J.,Teherani F. Hosseini,Orsal G.,Moudakir T.,Gautier S.,Sandana V. E.,Jomard F.,Abid M.,Molinari M.,Troyon M.,Voss P. L.,McGrouther D.,Chapman J. N.

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of photocatalytic deactivation of pure and black titania thin films;Journal of Photochemistry and Photobiology A: Chemistry;2019-06

2. Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs;Photonics and Nanostructures - Fundamentals and Applications;2015-06

3. Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers;Oxide-based Materials and Devices VI;2015-03-24

4. Nitride-based LEDs fabricated on ZnO-buffered sapphire substrates;Journal of the Taiwan Institute of Chemical Engineers;2012-07

5. Use of PLD-grown Moth-eye ZnO Nanostructures as Templates for MOVPE Growth of InGaN-Based Photovoltaics;Renewable Energy and the Environment;2011

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