III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range
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SPIE
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1. Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers;Journal of Applied Physics;2023-12-06
2. Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing;ECS Journal of Solid State Science and Technology;2022-01-01
3. Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE;Applied Physics Letters;2021-04-12
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