Characteristics of bulk InGaAsN and InGaAsSbN material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application
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SPIE
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Diagnosis and Breakeven Analysis of GaInNAs Subcell Incorporated in Monolithic Lattice-Matched Five-Junction Solar Cell;IEEE Journal of Photovoltaics;2022-11
2. GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy;Journal of Materials Science: Materials in Electronics;2019-12-16
3. Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy;Journal of Crystal Growth;2018-02
4. Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap;Japanese Journal of Applied Physics;2017-07-13
5. A Model Describing the Band Gap Energy of the Strained In x Ga1−x N y Sb z As1−y−z Alloy (0 < x ≤ 0.5, 0 < y ≤ 0.05, 0 < z ≤ 0.1);Journal of Electronic Materials;2016-12-19
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