Spectral reflectometry for metrology of three-dimensional through-silicon vias-Reference-Cited by-同舟云学术

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Spectral reflectometry for metrology of three-dimensional through-silicon vias

Published:2014-03-06 Issue:1 Volume:13 Page:011209
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Ku Yi-Sha¹

Affiliation:

1. Industrial Technology Research Institute, Center for Measurement Standards, Building 12, 321 Section 2, Kuang Fu Road, Hsinchu 30011, TaiwanbNational Tsing Hua University, Institute of Photonics Technologies, 101 Section 2, Kuang Fu Road, Hsinchu 30013, T

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adjustable low NA Quasi-Confocal reflectometry for ultra-high-aspect-ratio micro-structures;Optics & Laser Technology;2024-09

2. Modeling of the reflectance of multilayered structured semiconductor surfaces;Applied Physics A;2024-08-10

3. Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process;Metrology;2023-11-22

4. Non-integral depth measurement of high-aspect-ratio multi-layer microstructures using numerical-aperture shaped beams;Optics and Lasers in Engineering;2023-07

5. Non-integral model-based scatterometry for CD metrology of single high-aspect-ratio microstructures;Surface Topography: Metrology and Properties;2023-05-05

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