Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process
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Published:2023-11-22
Issue:4
Volume:3
Page:365-376
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ISSN:2673-8244
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Container-title:Metrology
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language:en
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Short-container-title:Metrology
Author:
Ku Yi-Sha12, Lo Chun-Wei1, Lee Cheng-Kang1, Cho Chia-Hung1, Cheah Wen-Qii12, Chou Po-Wen12
Affiliation:
1. Center for Measurement Standards, Industrial Technology Research Institute, Bldg. 1, 321 Sec. 2, Kuang Fu Rd., Hsinchu 300, Taiwan 2. College of Semiconductor Research, National Tsing Hua University, 101 Sec. 2, Kuang Fu Rd., Hsinchu 300, Taiwan
Abstract
The main challenges in 3D metrology involve measuring TSVs etched with very high aspect ratios, where the via depth to diameter ratio approaches 10:1–20:1. In this paper, we introduce an innovative approach to enhance our in-house spectroscopic reflectometer module by integrating aperture technology, resulting in a substantial amplification of interference signals. Our system offers the flexibility to conduct measurements on an average number of TSVs, individual TSVs, or specific periodic arrays of TSVs. Additionally, we demonstrate the utility of the spectroscopic reflectometer as a non-destructive, high-speed metrology solution for in-line monitoring of TSV etch uniformity. Through a series of experimental trials in a reactive ion etch (RIE) process, we show that leveraging feedback data from the reflectometer leads to marked improvements in etch depth uniformity.
Reference23 articles.
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