Impact of 14-nm photomask uncertainties on computational lithography solutions-Reference-Cited by-同舟云学术

Impact of 14-nm photomask uncertainties on computational lithography solutions

Published:2013-12-02 Issue:1 Volume:13 Page:011004
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Sturtevant John,Tejnil Edita,Lin Tim,Schulze Steffen,Buck Peter,Kalk Franklin,Nakagawa Kent,Ning Guoxiang,Ackmann Paul,Gans Fritz,Buergel Christian

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Model based mask process correction and verification for advanced process nodes

2. Application of mask process correction (MPC) to monitor and correct mask process drift

3. Exploring the limits of phase-shift lithography: Part I--the alternating shifter

4. Theoretical and experimental optimization of numerical aperture and partial coherence for complementary phase-shift processes

5. Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering

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