Structural improvement in resonant silicon sensors to sub-ppm/°C temperature coefficient of resonance frequency-Reference-Cited by-同舟云学术

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Structural improvement in resonant silicon sensors to sub-ppm/°C temperature coefficient of resonance frequency

Published:2014-03-20 Issue:1 Volume:13 Page:013016
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Hou Zhanqiang,Wu Xuezhong,Xiao Dingbang,Chen Zhihua,Su Jianbin

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid;Materials;2022-09-18

2. Investigation, modeling, and experiment of an MEMS S-springs vibrating ring gyroscope;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-01-16

3. Geometry dependence of temperature coefficient of resonant frequency in highly sensitive resonant thermal sensors;Japanese Journal of Applied Physics;2017-07-03

4. Mechanical properties of MEMS materials: reliability investigations by mechanical- and HRXRD-characterization related to environmental testing;SPIE Proceedings;2014-06-05

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