Estimating the out-of-band radiation flare levels for extreme ultraviolet lithography

Author:

George Simi A.

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Extreme ultraviolet lithography

2. V. Bakshi , Ed.,EUV Sources for Lithography, SPIE Press, Bellinghan WA (2005).

3. A. Miyake, H. Kanazawa, V. Banine, and K. Suzuki , “Joint requirements,”Sematech EUV Workshop Proc., Barcelona, Spain (Oct. 19, 2006).

4. P. Kürz , “The EUV optics development program at carl zeiss SMT AG,” see http://www.sematech.org/meetings/archives/litho/euvl/20030930/presentations/8A%20P%20Kurz%20EUV%20Symp.pdf (2003).

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1. A possible wafer heating during EUV exposure;International Conference on Extreme Ultraviolet Lithography 2018;2018-10-11

2. Dose performance characterization of extreme ultraviolet exposure system using enhanced energy sensitivity by resist contrast method;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07

3. Etched-multilayer black border formed on EUV mask: Does it cause image degradation during pattern inspection using EB optics?;Extreme Ultraviolet (EUV) Lithography VII;2016-03-18

4. XAS photoresists electron/quantum yields study with synchrotron light;Advances in Patterning Materials and Processes XXXII;2015-03-20

5. An accurate method to determine the amount of out-of-band light in an EUV scanner;SPIE Proceedings;2015-03-19

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