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XAS photoresists electron/quantum yields study with synchrotron light

  • Published:2015-03-20 Issue: Volume: Page:
  • ISSN:0277-786X
  • Container-title:Advances in Patterning Materials and Processes XXXII
  • language:
  • Short-container-title:

Author:

de Schepper Peter,Vaglio Pret Alessandro,Hansen Terje,Giglia Angelo,Hoshiko Kenji,Mani Antonio,Biafore John J.

Publisher

SPIE

Reference38 articles.

1. Turro, N., [Modern Molecular Photochemistry], University Science Books, (1991)

2. Radiation Chemistry in Chemically Amplified Resists;Kozawa,2010

3. RLS Tradeoff and Quantum Yield of High Photo Acid Generator Resists for Extreme Ultraviolet Lithography;Higgins,2009

4. Stochastic exposure kinetics of extreme ultraviolet photoresists: Trapping model

5. Extreme-ultraviolet secondary electron blur at the 22–nm half pitch node;Gronheid,2011

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1. Advanced Lithography;Springer Handbook of Semiconductor Devices;2022-11-11

2. Gaussian random field EUV stochastic models, their generalizations and lithographically meaningful stochastic metrics;Extreme Ultraviolet (EUV) Lithography XII;2021-02-22

3. EUV Photoresists: A Progress Report and Future Prospects;Synchrotron Radiation News;2019-07-04

4. Sensitizers in extreme ultraviolet chemically amplified resists: mechanism of sensitivity improvement;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-12-12

5. Electron trapping: a mechanism for acid production in extreme ultraviolet photoresists;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-07-23
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