Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors-Reference-Cited by-同舟云学术

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Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors

Published:2001-04-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Piotrowski Tadeusz T.,Piotrowska Anna,Kaminska E.,Piskorski M.,Papis-Polakowska Ewa,Golaszewska K.,Katcki J.,Ratajczak J.,Adamczewska J.,Wawro A.,Piotrowski Jozef,Orman Zbigniew,Pawluczyk Jaroslaw,Nowak Zenon

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys;Materials Science in Semiconductor Processing;2024-04

2. Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties;Journal of Materials Science;2023-10-30

3. Short-wave infrared InGaAs photodetectors and focal plane arrays;Chinese Physics B;2018-12

4. Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response;Materials Science in Semiconductor Processing;2015-03

5. Fabrication of GaSb Microlenses by Photo and E-Beam Lithography and Dry Etching;Solid State Phenomena;2004-07

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