EUV lithography optics for sub-9nm resolution-Reference-Cited by-同舟云学术

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EUV lithography optics for sub-9nm resolution

Published:2015-03-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Kneer Bernhard,Migura Sascha,Kaiser Winfried,Neumann Jens Timo,van Schoot Jan

Publisher

SPIE

Reference3 articles.

1. Multilayer optics with spectral purity layers for the EUV wavelength range;Louis,2006

2. Interactions of 3D mask effects and NA in EUV lithography;Neumann,2012

3. Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV);Kearney,2014

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1. On-Wafer FinFET-Based 3-D E-Beam Detector Cube for In Situ Monitoring of Advanced Lithography Processes Beyond 5 nm;IEEE Transactions on Electron Devices;2024-06

2. Pupil-Shaping Technique in Extreme Ultraviolet Lithography Illumination System;CHIN J LASERS;2024

3. The next step in Moore’s law: high-NA EUV introduction at the customer;Optical and EUV Nanolithography XXXVII;2024-04-10

4. Supercritical metalens at h-line for high-resolution direct laser writing;Opto-Electronic Science;2024

5. Status and outlook of EUV optics at ZEISS;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

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