Impact of stochastic process variations on overlay mark fidelity "towards the 5nm node"-Reference-Cited by-同舟云学术

Impact of stochastic process variations on overlay mark fidelity "towards the 5nm node"

Published:2017-03-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Adel Michael¹,Gronheid Roel²,Mack Chris³,Leray Philippe⁴,Gurevich Evgeni¹,Baudemprez Bart⁴,Vandenheuvel Dieter⁴,Mani Antonio²,Aharon Sharon¹,Klein Dana¹,Lee Jungtae⁵,Smith Mark D.⁶

Affiliation:

1. KLA-Tencor Israel (Israel)

2. KLA-Tencor Belgium (Belgium)

3. Fractilia (United States)

4. IMEC (Belgium)

5. KLA-Tencor (Korea, Republic of)

6. KLA-Tencor Corp. (United States)

Publisher

SPIE

Reference7 articles.

1. Stochastic exposure kinetics of EUV photoresists: a simulation study

2. Characterization of overlay mark fidelity

3. Target noise in overlay metrology

4. Overlay metrology solutions in a triple patterning scheme;Leray,2015

5. Correlation length and the problem of Line Width Roughness;Constantoudis,2007

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