The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots-Reference-Cited by-同舟云学术

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The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots

Published:2019-09-09 Issue: Volume: Page:
ISSN:
Container-title:Low-Dimensional Materials and Devices 2019
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Author:

Agarwal Anubhav,Aanand Abhijeet,Gazi Sanowar A.,Dongre Suryansh,Paul Sritoma,Mondal Shubham,Dahale Rishabh A.,Das Debabrata,Panda Debiprasad,Chakrabarti Subhananda

Publisher

SPIE

Reference13 articles.

1. Quantum-dot infrared photodetectors: Status and outlook

2. High-Temperature Operation of InAs–GaAs Quantum-Dot Infrared Photodetectors With Large Responsivity and Detectivity

3. Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors

4. Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors

5. Enhanced Performance of In(Ga)As QD Based Optoelectronic Devices through Improved Interface Quality between QD and Matrix Material

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