AlGaN/GaN metal-insulator-semiconductor capacitors with a buried Mg doped layer characterized by deep level transient spectroscopy and photoluminescence
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1. Analysis of hole-like traps in deep level transient spectroscopy spectra of AlGaN/GaN heterojunctions;Journal of Physics D: Applied Physics;2020-02-28
2. Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors;Semiconductor Science and Technology;2019-03-15
3. Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation;Journal of Applied Physics;2019-01-21
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