Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications-Reference-Cited by-同舟云学术

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Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications

Published:2018-03-19 Issue: Volume: Page:
ISSN:
Container-title:Novel Patterning Technologies 2018
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Author:

Reddy Pulikanti Guruprasad,Moinuddin Mohamad Ghulam,Ghosh Subrata,Pradeep Chullikkattil P. Pradeep,Gonsalves Kenneth,Sharma Satinder K.

Publisher

SPIE

Reference23 articles.

1. Moore G. Electronics Magazine. Apr; 38(8): 114. (1965).

2. ITRS. “International Technology Roadmap for Semiconductors 2.0: Executive Report.” Int. Technol. roadmap Semicond. 79 (2015).

3. Pushing the limits of lithography.;Ito,2000

4. New Generation Electron Beam Resists: A Review

5. Evolution of light source technology to support immersion and EUV lithography

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1. A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope;Beilstein Journal of Nanotechnology;2021-07-02

2. Resists for Helium Ion Beam Lithography: Recent Advances;ACS Applied Electronic Materials;2020-11-24

3. Neon and helium focused ion beam etching of resist patterns;Nanotechnology;2020-09-04

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