Simulation study of the influence of PEB reaction rates on resist LER-Reference-Cited by-同舟云学术

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Simulation study of the influence of PEB reaction rates on resist LER

Published:2015-04-06 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Bhattarai Suchit,Neureuther Andrew R.,Naulleau Patrick P.

Publisher

SPIE

Reference7 articles.

1. Resist blur and line-edge roughness;Gallatin,2005

2. Resolution, LER and sensitivity limitations of photoresists;Gallatin,2008

3. Effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer

4. Acid–base reactions in a positive tone chemically amplified photoresist and their effect on imaging

5. Sub-millisecond post exposure bake of chemically amplified resists by Co2 laaser heat treatment;Jung,2010

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11

2. Lithographic stochastics: beyond 3σ;Journal of Micro/Nanolithography, MEMS, and MOEMS;2017-06-12

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