Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch-Reference-Cited by-同舟云学术

Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

Published:2017-09-12 Issue:03 Volume:16 Page:1
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Shao Jinhai¹,Deng Jianan¹,Lu W.²,Chen Yifang¹

Affiliation:

1. Fudan University, State Key Lab of ASIC and System, Nanolithography and Application Research Group,

2. The Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Recent progress in scaling InP HEMT TMIC technology to 850 GHz

2. Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

3. Fabrication of ultra-short T gates by a two-step electron beam lithography process

4. Fabrication of 30 nm T gates using SiN[sub x] as a supporting and definition layer

5. Novel sloped etch process for 15nm InAlAs/InGaAs metamorphic HEMTs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reconfigurable TE-pass polarizer based on lithium niobate waveguide assisted by Ge₂Sb₂Te₅ and silicon nitride;Applied Optics;2023-08-16

2. Nanofabrications of T shape gates for high electron mobility transistors in microwaves and THz waves, a review;Micro and Nano Engineering;2021-11

3. Recent Progress in Nano-electronic Devices Based on EBL and IBL;Current Nanoscience;2020-03-26

4. A theoretical study of gating effect on InP-InGaAs HEMTs by tri-layer T–shape gate;Microelectronic Engineering;2019-03