Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique-Reference-Cited by-同舟云学术

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Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique

Published:2008-08-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Gnatyuk Volodymyr A.,Aoki Toru,Vlasenko Oleksandr I.,Levytskyi Sergiy N.,Hatanaka Yoshinori,Lambropoulos Charalambos P.

Publisher

SPIE

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of diffusion motion of In nanoparticles in a CdTe crystal during laser-induced doping;Physics and Chemistry of Solid State;2021-05-26

2. Effect of CdTe crystal thickness on the efficiency of Cr/CdTe/Au Schottky-diode detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-02

3. Gamma-Ray Spectroscopic Performance of Large-Area CdTe-Based Schottky Diodes;Recent Advances in Technology Research and Education;2018-08-19

4. Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x\ssty{/}γ-ray detectors;Semiconductor Science and Technology;2011-12-08

5. Charge transport mechanism in CdTe-based p-n junction detectors formed by laser irradiation;SPIE Proceedings;2010-08-19

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