Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x\ssty{/}γ-ray detectors-Reference-Cited by-同舟云学术

Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x\ssty{/}γ-ray detectors

Author:

Kosyachenko L A,Lambropoulos C P,Aoki T,Dieguez E,Fiederle M,Loukas D,Sklyarchuk O V,Maslyanchuk O L,Grushko E V,Sklyarchuk V M,Crocco J,Bensalah H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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