Impact of an etched EUV mask black border on imaging and overlay

Author:

Davydova Natalia1,de Kruif Robert1,Fukugami Norihito2,Kondo Shinpei2,Philipsen Vicky3,van Setten Eelco1,Connolly Brid4,Lammers Ad1,Vaenkatesan Vidya1,Zimmerman John5,Harned Noreen5

Affiliation:

1. ASML Netherlands B.V. (Netherlands)

2. Toppan Printing Co., Ltd. (Japan)

3. IMEC (Belgium)

4. Toppan Photomasks, Inc. (Germany)

5. ASML Wilton (United States)

Publisher

SPIE

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Full-field correction for stitched double exposure high-NA EUVL processes;DTCO and Computational Patterning III;2024-04-10

2. OPC and modeling solution towards 0.55NA EUV stitching;Optical and EUV Nanolithography XXXVII;2024-04-10

3. Development of an EUV and OoB Reflectometer at NewSUBARU synchrotron light facility;Photomask Technology 2019;2019-09-26

4. EUV mask with advanced hybrid black border suppressing EUV and DUV OOB light reflection;Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology;2018-06-12

5. Extreme ultraviolet mask multilayer material variation impact on horizontal to vertical pattern bias;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

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