Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)
Author:
Affiliation:
1. Brandenburgische Technische Univ. Cottbus (Germany)
2. Univ. Stuttgart (Germany)
Publisher
SPIE
Reference15 articles.
1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
2. Electroluminescence of germanium LEDs on silicon: Influence of antimony doping
3. Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics
4. Lasing in direct-bandgap GeSn alloy grown on Si
5. Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
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1. Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate;Photonics Research;2023-09-12
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3. Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminescence of Ge‐based structures on Si substrate;physica status solidi c;2017-05-09
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