Investigating the effect of ionizing radiation on the acid concentration necessary for dissolution of chemically amplified EUV photoresists

Author:

Grzeskowiak Steven,Kaminsky Jake,Chandonait Jonathan,Denbeaux Greg H.,Gibbons Sean,Welling Ulrich,Melvin Lawrence S.,Kandel Yudhishthir,Brainard Robert L.

Publisher

SPIE

Reference20 articles.

1. Microlithography · Molecular Imprinting

2. Radiation Chemistry in Chemically Amplified Resists

3. Polymer effects on PAG acid yield in EUV resists;Grzeskowiak,2018

4. Studying electron-PAG interactions using electron-induced fluorescence;Narasimhan,2016

5. Secondary Electrons in EUV Lithography

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1. Study of electron-induced chemical transformations in polymers;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-07-16

2. The importance of less damaged and surface sensitive metrology to identify true EUV process monitoring;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

3. Study of electron-induced chemical transformations in model resists;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

4. Tracing optimized condition for electron beam metrology of EUV photoresist pattern using low-landing energy;Metrology, Inspection, and Process Control XXXVII;2023-04-27

5. Tracing optimized condition for electron beam metrology of EUV photoresist pattern using low landing energy;Metrology, Inspection, and Process Control XXXVII;2023-04-27

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