Aqueous developers for positive tone ultrathin chemically amplified EUV resists-Reference-Cited by-同舟云学术

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Aqueous developers for positive tone ultrathin chemically amplified EUV resists

Published:2018-03-28 Issue: Volume: Page:
ISSN:
Container-title:Advances in Patterning Materials and Processes XXXV
language:
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Author:

Kumar Bharat,Goldfarb Dario L.

Publisher

SPIE

Reference39 articles.

1. Pattern collapse mitigation strategies for EUV lithography;Goldfarb,2012

2. Study of alternate hardmasks for extreme ultraviolet patterning

3. Fundamentals of EUV resist-inorganic hardmask interactions;Goldfarb,2017

4. Single expose patterning development for EUV Lithography;De Silva,2017

5. Partitioning for single expose EUV patterning;Meli,2018

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design strategy of extreme ultraviolet resists;Japanese Journal of Applied Physics;2024-05-01

2. Relationship between poly(4-hydroxystyrene) (PHS) and tetramethylammonium hydroxide (TMAH) concentrations during the development of PHS films in TMAH aqueous solution studied by a quartz crystal microbalance (QCM) method;Japanese Journal of Applied Physics;2024-01-01

3. 极紫外光刻的随机性问题及其研究进展;Chinese Journal of Lasers;2024

4. Defect risks at interfaces of chemically amplified resists in extreme ultraviolet lithography process;Japanese Journal of Applied Physics;2023-07-01

5. Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer;Japanese Journal of Applied Physics;2023-03-23

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