Evidence of carrier localization in InAsSb/InSb digital alloy nBn detector-Reference-Cited by-同舟云学术

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Evidence of carrier localization in InAsSb/InSb digital alloy nBn detector

Published:2017-02-22 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Infrared Technology and Applications XLIII
language:
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Author:

Pepper Brian J.¹,Soibel Alexander¹,Ting David Z.¹,Hill Cory J.¹,Khoshakhlagh Arezou¹,Fisher Anita M.¹,Keo Sam A.¹,Gunapala Sarath D.¹

Affiliation:

1. Jet Propulsion Lab. (United States)

Publisher

SPIE

Reference16 articles.

1. nBn detector, an infrared detector with reduced dark current and higher operating temperature

2. Mid-wavelength infrared InAsSb/InSb nBn detector with extended cut-off wavelength

3. Extended cut-off wavelength nBn detector utilizing InAsSb/InSb digital alloy absorber;Soibel,2017

4. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

5. Minority Carrier Lifetimes in InSb/InAsSb Quantum Dot and InAsSb nBn Photodetectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of carrier localization in InAs/AlSb type-II superlattice material system;Applied Physics Letters;2019-11-18

2. Spatial dependence of carrier localization in InAsSb/InSb digital alloy nBn detector;Infrared Physics & Technology;2019-06

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