Mask-roughness-induced line-edge roughness: rule of thumb-Reference-Cited by-同舟云学术

Mask-roughness-induced line-edge roughness: rule of thumb

Published:2010-10-01 Issue:4 Volume:9 Page:041208
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Naulleau Patrick P.

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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3. Line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization

4. T. Milster and N. Beaudry , “Scattering and Coherence in EUVL,” inEmerging Lithographic Technologies II, Y. Vladimirsky , Ed., Proc. SPIE 3331, 537–543 (1998).

5. N. Beaudry and T. Milster , “Effects of mask roughness and condenser scattering in EUVL systems,” inEmerging Lithographic Technologies III, Y. Vladimirsky , Ed., Proc. SPIE 3676, 653–662 (1999).

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4. Impact of EUV photomask line-edge roughness on wafer prints;SPIE Proceedings;2012-11-08

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