Contrast optimization for 0.33NA EUV lithography-Reference-Cited by-同舟云学术

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Contrast optimization for 0.33NA EUV lithography

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Finders Jo¹,Wuister Sander¹,Last Thorsten¹,Rispens Gijsbert¹,Psari Eleni¹,Lubkoll Jan¹,van Setten Eelco¹,Wittebrood Friso¹

Affiliation:

1. ASML Netherlands B.V. (Netherlands)

Publisher

SPIE

Reference3 articles.

1. Overlay and edge placement control strategies for the 7nm node using EUV and ArF lithography;Mulkens,2015

2. Can DUV take us below 100nm;Finders,2001

3. Jo Finders et al., “Mitigation of Mask 3D induced Phase effects by Absorber Optimization in ArFi and EUV Lithography”, submitted to JM3 for publication.

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1. Improving EUV sub-40nm via single patterning using wavefront and pupil co-optimization;Optical and EUV Nanolithography XXXVII;2024-04-10

2. 极紫外光刻中的边缘放置误差控制;Chinese Journal of Lasers;2024

3. Measurement of image fading impact on 20P40 contact hole LCDU;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-28

4. Hyper NA EUV lithography: an imaging perspective;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-11-14

5. Influence of the vibration of extreme ultraviolet lithographic tool stages on imaging;Optics Express;2023-06-20

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