Improving EUV sub-40nm via single patterning using wavefront and pupil co-optimization-Reference-Cited by-同舟云学术

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Improving EUV sub-40nm via single patterning using wavefront and pupil co-optimization

Published:2024-04-10 Issue: Volume:20 Page:10
ISSN:
Container-title:Optical and EUV Nanolithography XXXVII
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Author:

Kim Soojung,Chung No Young,Maeng Kwangseok,Cho Hyunjae,Lim Jerry,Jang Hyungrok,Kim Jae Hyoung,Kim Insung,van Setten Eelco,Keizers Hidde,Patil Ajinkya,Beekmans Steven,Lee Jungtae,Kim Ki-Seok,Lee James,Park Sung-Woon,Tang Jialei,Hsu Stephen,Zhang Youping,Derks Paul

Publisher

SPIE

Reference20 articles.

1. Statistical simulation of photoresists at EUV and ArF;Biafore,2005

2. Stochastic exposure kinetics of extreme ultraviolet photoresists: simulation study

3. Model-based breakdown of resist and mask contributions to local CDU for sub-30-nm contact holes in EUV lithography

4. Resist blur and line edge roughness

5. Asymmetric Properties of the Aerial Image in Extreme Ultraviolet Lithography

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