Assist features: placement, impact, and relevance for EUV imaging-Reference-Cited by-同舟云学术

Assist features: placement, impact, and relevance for EUV imaging

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Mochi Iacopo¹,Philipsen Vicky¹,Gallagher Emily¹,Hendrickx Eric¹,Lyakhova Kateryna²,Wittebrood Friso²,Schiffelers Guido²,Fliervoet Timon²,Wang Shibing³,Hsu Stephen³,Plachecki Vince³,Baron Stan³,Laenens Bart³

Affiliation:

1. IMEC (Belgium)

2. ASML Netherlands B.V. (Netherlands)

3. ASML Brion (United States)

Publisher

SPIE

Reference9 articles.

1. Validation of inverse lithography technology (ILT) and its adaptive SRAF at advanced technology nodes;Pang,2008

2. Impact of the EUV mask phase response on the asymmetry of Bossung curves as predicted by rigorous EUV mask simulations;Krautschik,2001

3. Understanding Bossung curve asymmetry and focus shift effect in EUV lithography;Yan,2002

4. Mask-induced best-focus-shifts in DUV and EUV lithography;Erdmann,2015

5. Clear sub-resolution assist features for EUV;Burkhardt,2014

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