Analysis of distinct scattering of extreme ultraviolet phase and amplitude multilayer defects with an actinic dark-field microscope-Reference-Cited by-同舟云学术

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Analysis of distinct scattering of extreme ultraviolet phase and amplitude multilayer defects with an actinic dark-field microscope

Published:2015-03-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Bahrenberg Lukas,Herbert Stefan,Tempeler Jenny,Maryasov Aleksey,Hofmann Oskar,Danylyuk Serhiy,Lebert Rainer,Loosen Peter,Juschkin Larissa

Publisher

SPIE

Reference17 articles.

1. ITRS, “International Technology Roadmap for Semiconductors, 2013 Edition - Metrology,” http://www.itrs.net/Links/2013ITRS/2013Chapters/2013Metrology.pdf (2013).

2. EUV actinic mask blank defect inspection: results and status of concept realization;Maryasov,2011

3. Performance in practical use of actinic EUVL mask blank inspection;Kato,2014

4. EUV microscopy for defect inspection by dark-field mapping and zone plate zooming;Juschkin,2009

5. Ebeam based mask repair as door opener for defect free EUV masks;Waiblinger,2012

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1. Towards fast ptychography image reconstruction of EUV masks by deep neural networks;Photomask Technology 2023;2023-11-21

2. Influence of the electrode wear on the EUV generation of a discharge based extreme ultraviolet light source;Journal of Physics D: Applied Physics;2017-08-07

3. Scanning coherent scattering methods for actinic EUV mask inspection;SPIE Proceedings;2016-10-05

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