IMEC N7, N5 and beyond: DTCO, STCO and EUV insertion strategy to maintain affordable scaling trend-Reference-Cited by-同舟云学术

IMEC N7, N5 and beyond: DTCO, STCO and EUV insertion strategy to maintain affordable scaling trend

Published:2018-03-20 Issue: Volume: Page:
ISSN:
Container-title:Design-Process-Technology Co-optimization for Manufacturability XII
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Author:

Kim Ryan Ryoung-Han,Sherazi Syed Muhammad Yasser,Debacker Peter,Raghavan Praveen,Ryckaert Julien,Malik Arindam,Verkest Diederik,Lee Jae Uk,Gillijns Werner,Tan Ling Ee,Blanco Victor,Ronse Kurt,McIntyre Greg

Publisher

SPIE

Reference9 articles.

1. Design and pitch scaling for affordable node transition and EUV insertion scenario;Kim,2017

2. Extreme Scaling enabled by 5 Tracks Cells : Holistic design-device co-optimization for FinFETs and Lateral Nanowires;Bardon,2017

3. Enablement of 5-tracks standard cells through EUV compatible N5 ruleset;Mattii,2018

4. More Moore: From device scaling to 3D integration and system-technology co-optimization

5. Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks

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