Semi/non-polar nitride quantum wells for high-efficient light emitters
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SPIE
Reference21 articles.
1. Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
2. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
3. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
4. Nonpolarm-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
5. Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impacts of hydrogen flow and growth pressure on characteristics of semipolar (11 2‾ 2) plane AlInGaN quaternary epilayers;Micro and Nanostructures;2022-10
2. Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates;Materials Science in Semiconductor Processing;2021-05
3. Effects of indium surfactant on growth and characteristics of (112¯2) plane AlGaN-based multiple quantum wells;Optical Materials Express;2017-12-04
4. Origin of temperature-induced luminescence peak shifts from semipolar (112¯2) InxGa1−xN quantum wells;Physical Review B;2017-09-18
5. Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0);Semiconductor Science and Technology;2016-07-12
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