Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)-Reference-Cited by-同舟云学术

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Published:2016-07-12 Issue:8 Volume:31 Page:085007
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Pristovsek Markus,Han Yisong,Zhu Tongtong,Oehler Fabrice,Tang Fengzai,Oliver Rachel A,Humphreys Colin J,Tytko Darius,Choi Pyuck-Pa,Raabe Dierk,Brunner Frank,Weyers Markus

Funder

European Research Council

Engineering and Physical Sciences Research Council

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=8/a=085007/pdf

Reference54 articles.

1. Nitrides with Nonpolar Surfaces

2. Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors

3. Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire

4. Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

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