The material design to reduce outgassing in acetal-based chemically amplified resist for EUV lithography-Reference-Cited by-同舟云学术

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The material design to reduce outgassing in acetal-based chemically amplified resist for EUV lithography

Published:2006-03-10 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Masuda Seiya,Kawanishi Yasutomo,Hirano Shuuji,Kamimura Sou,Mizutani Kazuyoshi,Yasunami Shoichiro,Kawabe Yasumasa

Publisher

SPIE

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trends in photoresist materials for extreme ultraviolet lithography: A review;Materials Today;2023-07

2. In-situ measurement of outgassing generated from EUV metal oxide nanoparticles resist during electron irradiation;International Conference on Extreme Ultraviolet Lithography 2018;2018-10-03

3. In-Situ Measurement of Outgassing Generated from EUV Metal Oxide Nanoparticles Resist During Electron Irradiation;Journal of Photopolymer Science and Technology;2018-06-25

4. Driving Force Dependence of Electron Transfer from Electronically Excited [Ir(COD)(μ-Me2pz)]2 to Photo-Acid Generators;The Journal of Physical Chemistry A;2017-09-28

5. Novel EUV resist materials design for 14nm half pitch and below;SPIE Proceedings;2014-04-17

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